Semiconductor device having a GaN-based semiconductor layer doped with Fe

摘要

A semiconductor device includes: a semiconductor layer made of Fe-doped GaN; a first buffer layer that is provided on the semiconductor layer so as to contact an upper surface of the semiconductor layer and is made of AlN or Al_xGa_1-xN (0.4x1); and an operating layer that is provided on the first buffer layer and is made of a GaN-based semiconductor.