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First-principle Studies on Ferromagnetism of Fe-doped AlN Diluted Magnetic Semiconductors

机译:掺杂铁的AlN稀释的磁半导体的铁磁性的第一性原理研究

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We have studied the electronic structures and magnetic properties of Fe-doped AlN by first-principles calculations within density functional theory. The calculated results show that AlN crystals doped by double Fe atoms display ferromagnetic properties, and the total magnetic moment is 10.0?μB per 72-atom supercell (3?×?3?×?2). The calculated energy differences between the antiferromagnetic (AFM) and ferromagnetic (FM) phases are 207?meV, which means FM state is a stable state. It is also found that the 3d-states of Fe dopants and the 2p-states of N atoms bonding to Fe dopants are the main contributors to the density of states at the Fermi level.
机译:我们已经通过密度泛函理论中的第一性原理研究了掺杂Fe的AlN的电子结构和磁性。计算结果表明,双Fe原子掺杂的AlN晶体具有铁磁性,每72个原子的超级电池的总磁矩为10.0?μB(3?×?3?×?2)。计算出的反铁磁(AFM)和铁磁(FM)相之间的能量差为207?meV,这意味着FM状态为稳定状态。还发现,Fe掺杂剂的3d态和与Fe掺杂剂结合的N原子的2p态是费米能级密度的主要贡献者。

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