首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >The spray-ILGAR? (ion layer gas reaction) method for the deposition of thin semiconductor layers: Process and applications for thin film solar cells
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The spray-ILGAR? (ion layer gas reaction) method for the deposition of thin semiconductor layers: Process and applications for thin film solar cells

机译:喷ILGAR? (离子层气体反应)沉积半导体薄层的方法:薄膜太阳能电池的工艺和应用

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The spray Ion Layer Gas Reaction (ILGAR) process starts with ultrasonic nebulisation of the precursor solution, e.g. InCl_3/ethanol for our successful buffer material In_2S_3. In an aerosol assisted chemical vapour deposition (AACVD) type reaction an In(O,OH,Cl) film is deposited on a heated substrate and is subsequently converted to In 2S3 by H2S gas. The cycle of these steps is repeated until the required layer thickness is obtained. The robust and reproducible process allows a wide control of composition and morphology. Results of this spray-ILGAR method with respect to process, material properties and its application depositing the buffer layer in chalcopyrite solar cells are reviewed. New aspects such as the investigation of the complex chemical mechanism by mass spectrometry, the process acceleration by the addition of H2S gas to the aerosol, the controlled deposition of ZnS nano-dot films and finally the latest achievements in process up-scaling are also included. Solar cells based on industrial Cu(In,Ga)(S,Se)_2 absorbers (Avancis GmbH) with a Spray-ILGAR In2S3 buffer reached 14.7% efficiency (certified) and 15.3% with a ZnS/In_2S_3 bi-layer buffer comparable to reference cells using standard CdS buffer layers deposited by chemical bath deposition (CBD). The quasi-dry, vacuum-free ILGAR method for In2S3 buffer layers is well suited for industrial in-line production and is capable of not only replacing the standard buffer material (the toxic CdS) but also the often slow CBD process. A tape coater for 10 cm wide steel tape was constructed. It was shown that In 2S3 layers could be produced with an indium yield better than 30% and a linear production speed of 1m/min. A roll-to-roll pilot production line for electrochemically deposited Cu(In,Ga)Se_2 with ILGAR buffer is running in industry (CIS-Solartechnik, Hamburg). A 30x30 cm ~2 prototype of an ILGAR in-line coater developed by Singulus and Helmholtz Zentrum Berlin is currently being optimised. First 30×30 cm ~2 encapsulated modules achieved efficiencies up to 13.0% (CdS buffered reference 13.3%).
机译:喷雾离子层气体反应(ILGAR)过程始于前驱物溶液的超声雾化,例如InCl_3 /乙醇是我们成功的缓冲材料In_2S_3。在气溶胶辅助化学气相沉积(AACVD)型反应中,In(O,OH,Cl)膜沉积在加热的基材上,随后被H2S气体转化为In 2S3。重复这些步骤的循环,直到获得所需的层厚度为止。健壮且可重复的过程可广泛控制成分和形态。回顾了这种喷雾-ILGAR方法在工艺,材料性能及其在黄铜矿太阳能电池中沉积缓冲层的应用方面的结果。还包括了新的方面,例如通过质谱法研究复杂的化学机理,通过向气溶胶中添加H2S气体来加速过程,控制ZnS纳米点膜的沉积以及最后在过程放大方面的最新成果。 。基于工业Cu(In,Ga)(S,Se)_2吸收剂(Avancis GmbH)和Spray-ILGAR In2S3缓冲液的太阳能电池的可比性达到14.7%(经认证),使用ZnS / In_2S_3双层缓冲液的太阳能电池达到15.3%(经认证)参考单元使用通过化学浴沉积(CBD)沉积的标准CdS缓冲层。用于In2S3缓冲层的准干燥,无真空ILGAR方法非常适合工业在线生产,不仅能够代替标准缓冲材料(有毒的CdS),而且还能够替代通常缓慢的CBD工艺。构造了用于10cm宽的钢带的带涂布机。结果表明,可以以高于30%的铟收率和1m / min的线性生产速度生产In 2S3层。带有ILGAR缓冲液的电化学沉积Cu(In,Ga)Se_2的卷对卷中试生产线正在工业中运行(CIS-Solartechnik,汉堡)。由Singulus和Helmholtz Zentrum Berlin开发的ILGAR在线涂布机的30x30 cm〜2原型目前正在优化中。最初的30×30 cm〜2封装模块实现了高达13.0%的效率(CdS缓冲参考为13.3%)。

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