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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Large-scale, high-efficiency thin-film silicon solar cells fabricated by short-pulsed plasma CVD method
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Large-scale, high-efficiency thin-film silicon solar cells fabricated by short-pulsed plasma CVD method

机译:通过短脉冲等离子体CVD法制造的大规模,高效率的薄膜硅太阳能电池

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摘要

A novel growth technology of microcrystalline silicon (pc-Si:H) thin films has been developed using short-pulsed VHF plasma CVD method [K. Nomoto, et al., Short-pulse VHF plasma-enhanced CVD of high-deposition-rate a-Si:H films, in: Proceedings of the 14th European Photovoltaic Solar Energy Conference and Exhibition, 1997, pp. 1226-1230]. The homogeneity of crystallinity in a film over square meter was improved by using this technology. We applied this technology to intrinsic layers of pc-Si:H single solar cell, and confirmed that the homogeneity of cell's characteristics on a large-scale substrate was improved. And using this novel fabrication technology to intrinsic layers of a-Si:H/mu c-Si:H tandem thin-film Si solar cell, initial conversion efficiency of 12.1 %, corresponding to about I I % stabilized conversion efficiency was obtained with a large-scale substrate size of 925 mm x 560 mm. (c) 2006 Elsevier B.V. All rights reserved.
机译:利用短脉冲VHF等离子体CVD方法已经开发了一种微晶硅(pc-Si:H)薄膜的新型生长技术[K. Nomoto等人,“高沉积速率a-Si:H薄膜的短脉冲VHF等离子体增强CVD”,载于:第14届欧洲光伏太阳能会议和展览会论文集,1997年,第1226-1230页]。通过使用该技术,可以提高薄膜在平方米上的均匀度。我们将该技术应用于pc-Si:H单个太阳能电池的本征层,并确认在大型衬底上提高了电池特性的均匀性。并将这种新颖的制造技术用于a-Si:H / mu c-Si:H串联薄膜Si太阳能电池的本征层,初始转换效率为12.1%,对应于约II%的稳定转换效率。尺寸为925 mm x 560 mm的基板。 (c)2006 Elsevier B.V.保留所有权利。

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