High-Efficiency p-Type Si Solar Cell Fabricated by Using Firing-Through Aluminum Paste on the Cell Back Side

摘要

Firing-through paste used for rear-side metallization of p-type monocrystalline silicon passivated emitter and rear contact (PERC) solar cells was developed. The rear-side passivation Al O layer and the SiN layer can be effectively etched by the firing-through paste. Ohmic contact with a contact resistivity between 1 to 10 mΩ·cm was successfully fabricated. Aggressive reactive firing-through paste would introduce non-uniform etching and high-density recombination centers at the Si/paste interface. Good balance between low resistive contact formation and relatively high open-circuit voltage can be achieved by adjusting glass frit and metal powder content in the paste. Patterned dot back contacts formed by firing-through paste can further decrease recombination density at the Si/paste interface. A P-type solar cell with an area of 7.8 × 7.8 cm with a V of 653.4 mV and an efficiency of 19.61% was fabricated.