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Non-vacuum processed CuInSe2 thin films fabricated with a hybrid ink

机译:用混合墨水制备的非真空处理的CuInSe2薄膜

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摘要

CuInSe2 (CIS) thin films were formed on a Mo-coated soda lime glass with a newly formulated hybrid ink composed of binary Cu2-xSe nanoparticles and an In precursor solution. The thin films were fabricated by the spin coating method and a subsequent selenization process, and the compositional and structural properties of the CIS thin films were characterized. Deposition of a hybrid ink provides the unique advantage of producing centers composed of pure material-based nanoparticles that can promote stress-relief and crack-deflection. Additionally, hybrid inks offer efficient binding with nanoparticles by using precursor solutions without other organic binders. Binary Cu2-xSe nanoparticles were synthesized by a low-temperature colloidal process, and an In precursor solution was prepared by using a non-toxic chelating agent for dispersing the In component stably. The band gap of the CIS thin film was measured to be 1.14 eV by the external quantum efficiency (EQE) technique, and the best conversion efficiency of the fabricated device was determined to be 4.19%.
机译:使用新配制的由二元Cu2-xSe纳米粒子和In前驱体溶液组成的混合油墨,在Mo涂层钠钙玻璃上形成CuInSe2(CIS)薄膜。通过旋涂法和随后的硒化工艺制备薄膜,并表征了CIS薄膜的组成和结构性质。混合墨水的沉积具有产生由纯材料基纳米颗粒组成的中心的独特优势,该中心可以促进应力消除和裂纹变形。另外,通过使用前体溶液而不使用其他有机粘合剂,混合油墨可与纳米颗粒有效结合。通过低温胶体工艺合成了二元Cu2-xSe纳米粒子,并使用无毒螯合剂稳定地分散了In组分,制备了In前驱体溶液。通过外部量子效率(EQE)技术测得CIS薄膜的带隙为1.14 eV,确定的最佳转换效率为4.19%。

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