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Thin-film semiconductor device, lateral bipolar thin-film transistor, hybrid thin-film transistor, MOS thin-film transistor, and method of fabricating thin-film transistor

机译:薄膜半导体器件,横向双极型薄膜晶体管,混合薄膜晶体管,MOS薄膜晶体管及其制造方法

摘要

In a lateral bipolar transistor including an emitter, a base and a collector which are formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction. In addition, in a MOS-bipolar hybrid transistor formed in a semiconductor thin film formed on an insulating substrate, the semiconductor thin film is a semiconductor thin film which is crystallized in a predetermined direction.
机译:在包括在绝缘基板上形成的半导体薄膜中形成的发射极,基极和集电极的横向双极型晶体管中,半导体薄膜是在预定方向上结晶的半导体薄膜。另外,在形成于绝缘基板上的半导体薄膜中形成的MOS双极型混合晶体管中,该半导体薄膜是在规定方向上结晶的半导体薄膜。

著录项

  • 公开/公告号US8426264B2

    专利类型

  • 公开/公告日2013-04-23

    原文格式PDF

  • 申请/专利权人 GENSHIRO KAWACHI;

    申请/专利号US201113149175

  • 发明设计人 GENSHIRO KAWACHI;

    申请日2011-05-31

  • 分类号H01L21/8238;H01L21;

  • 国家 US

  • 入库时间 2022-08-21 16:45:01

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