Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells

摘要

The front transparent conductive oxide layer is a source of significant optical and electrical losses in silicon heterojunction solar cells because of the trade-off between free-carrier absorption and sheet resistance. We demonstrate that hydrogen-doped indium oxide (IO:H), which has an electron mobility of over 100 cm~2/V s, reduces these losses compared to traditional, low-mobility transparent conductive oxides, but suffers from high contact resistance at the interface of the IO:H layer and the silver front electrode grid. This problem is avoided by inserting a thin indium tin oxide (ITO) layer at the IO:H/silver interface. Such IO:H/ITO bilayers have low contact resistance, sheet resistance, and free-carrier absorption, and outperform IO:H-only or ITO-only layers in solar cells. We report a certified efficiency of 22.1% for a 4-cm~2 screen-printed silicon heterojunction solar cell employing an IO:H/ITO bilayer as the front transparent conductive oxide.