首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Replacement of the CBD-CdS buffer and the sputtered i-ZnO layer by an ILGAR-ZnO WEL: optimization of the WEL deposition
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Replacement of the CBD-CdS buffer and the sputtered i-ZnO layer by an ILGAR-ZnO WEL: optimization of the WEL deposition

机译:用ILGAR-ZnO WEL代替CBD-CdS缓冲液和溅射的i-ZnO层:优化WEL沉积

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摘要

As shown earlier the window extension layer (WEL) concept for thin film solar cells based on chalcopyrites results in device performances exceeding those of corresponding chemical bath deposited cadmium sulfide (CBD-CdS) buffered reference cells. The WEL concept is extended and it will be demonstrated, that now a single WEL successfully replaces both, the conventional buffer and the intrinsic part of the window bi-layer usually deposited by sputtering. Thus, one part of the window is deposited directly onto the absorber by a soft process called ion layer gas reaction (ILGAR). The optimization of ILGAR-ZnO WELs on Cu(In,Ga)(S,Se)(2) absorbers with respect to the efficiencies of the completed solar cells is presented. This effort results in 'total area' efficiencies of 14.5% (best cell) which are comparable to those of devices with CBD-CdS buffer (14.7%-best cell) without any antireflecting coating. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 13]
机译:如前所述,基于黄铜矿的薄膜太阳能电池的窗口扩展层(WEL)概念导致器件性能超过相应的化学浴沉积的硫化镉(CBD-CdS)缓冲参比电池。 WEL概念得到了扩展,并且将证明,现在,单个WEL成功地替代了常规缓冲液和通常通过溅射沉积的窗口双层的固有部分。因此,窗口的一部分通过称为离子层气体反应(ILGAR)的软过程直接沉积到吸收器上。提出了关于完成的太阳能电池效率的Cu(In,Ga)(S,Se)(2)吸收剂上的ILGAR-ZnO WEL的优化。这种努力导致“总面积”效率为14.5%(最佳电池),与没有任何抗反射涂层的带有CBD-CdS缓冲液的设备(最佳电池为14.7%)相当。 (C)2002 Elsevier Science B.V.保留所有权利。 [参考:13]

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