Method of forming indium tin oxide thin film including a seed layer and a bulk layer utilizing an optimized sequential sputter deposition

摘要

The present invention relates to an indium tin oxide thin film formation method having a second planarized surface characteristics at the ITO electrode constituting a display such as LCD, OLED.; The present invention on the substrate in the sputtering gas supplied to the ion source under the display device a transparent conductive electrode of a transparent when forming the indium tin oxide thin film separated by a seed layer and a bulk layer on a substrate, giving an oxygen atmosphere flowing in the vicinity of the substrate in the first sputter deposition process for forming the indium tin oxide thin film and the second sputter deposition process for forming the indium tin oxide thin film on the substrate with only the sputtering gas was supplied to the ion source and, and the seed layer and deposition of the bulk layer provides a first sputter deposition process or the second sputtering indium tin oxide thin film forming method characterized in that it has a different process conditions in the deposition process.