METHOD OF FORMING INDIUM TIN OXIDE THIN FILM USING SEQUENTIAL SPUTTER DEPOSITION OF SEED LAYER AND BULK LAYER

摘要

PURPOSE: A method is provided to achieve improved electrical and optical characteristics and simplify manufacturing procedures by optimizing a sputter deposition process. CONSTITUTION: A method comprises a first sputter deposition step of forming an indium tin oxide thin film including a seed layer and a bulk layer on a substrate by using the sputtering gas supplied to an ion source under an oxygen atmosphere; and a second sputter deposition step of forming the indium tin oxide thin film on the substrate by using only the sputtering gas supplied to the ion source. The seed layer and the bulk layer are deposited in different process conditions.