A Novel Structure of AMLCD Panel Using Poly-Si cmos TFT

摘要

In the fabrication of CMOS AMLCD panel; there has been much effort to reduce the number of mask steps in order to achieve the simpler process as well as the low-cost production. In this paper; two methods for mask reduction; storage mask and LDD mask as well as self-aligned sub micron LDD n-channel TFT are introduced with good uniformity concept.