Inverse staggered poly-Si and amorphous Si double structure TFT's for LCD panels with peripheral driver circuits integration

摘要

Inverse staggered polycrystalline silicon (poly-Si) and hydrogenated amorphous silicon (a-Si:H) double structure thin-film transistors (TFT's) are fabricated based on the conventional a-Si:H TFT process on a single glass substrate. After depositing a thin (20 nm) a-Si:H using the plasma CVD technique at 300/spl deg/C, Ar/sup +/ and XeCl (300 mJ/cm/sup 2/) lasers are irradiated successively, and then a thick a-Si:H (200 nm) and n/sup +/ Si layers are deposited again. The field effect mobilities of 10 and 0.5 cm /sup 2//V/spl middot/s are obtained for the laser annealed poly-Si and the a-Si:H (without annealing) TFT's, respectively.