Investigation of the optical properties of GaAs with delta-Si doping grown by molecular-beam epitaxy at low temperatures

摘要

Molecular-beam epitaxy is used for the preparation of structures based on "low-temperature" grown GaAs with introduced d-Si doping. Specific features in the photon-energy range of 1.28-1.48 eV are observed in the photoluminescence spectrum after structures annealing at temperatures of 520 and 580A degrees C; these features are related to the formation of point defects and their complexes. The "pump-probe" light transmission measurements reveal that the characteristic lifetimes of nonequilibrium carriers in the fabricated structures amount to T-c a parts per thousand 1.2-1.5 ps.