Long-term photoconductivity decay in n-InGaAs/GaAs heterostructures with coupled quantum wells under band-to-band excitation

摘要

The photoconductivity kinetics in n-In_xGa_(1 - x)As/GaAs heterostructures with double-coupled quantum wells and δ doping of one of them has been experimentally studied under interband excitation. It is shown that the long-term photoconductivity decay observed in the temperature range from 10 to 70 K is due to the chaotic potential associated with composition fluctuations in quantum-well layers.