Quantum Hall plateau-plateau transitions in n-InGaAs/GaAs heterostructures before and after IR illumination

摘要

The longitudinal rho(xx)(B, T) and Hall rho(xy)(B, T) magnetoresistances in n-InGaAs/GaAs heterostructures with a single quantum well are studied experimentally before and after IR illumination in the quantum Hall regime in magnetic fields B = 0-12 T and at temperatures T = 0.4-4.2 K. The temperature dependence of the width of quantum Hall plateau-plateau transitions is analyzed in terms of a two-parameter scaling theory. (C) 2015 AIP Publishing LLC.