On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperatures

摘要

Owing to the radiation-induced pronounced conductivity compensation in silicon carbide, carrier localization (trapping) prevails over recombination in capture of nonequilibrium carriers. This makes it possible, by raising the temperature, to reduce the time of carrier retention by a trapping center to values shorter than the duration of signal shaping by electronic circuits. For structural defects created by 6.5-MeV protons, the temperature excluding degradation of the detector signal via carrier localization is estimated. The values of the appearing generation current the noise of which can restrict the operation of a detector in the spectrometric mode are determined.