Crystal perfection of GaP films grown on Si substrates by solid-source MBE with atomic hydrogen

摘要

GaP films have been grown by migration-enhanced epitaxy on Si (001) substrates tilted by 6° about the ?011? axis. High-energy electron diffraction, transmission electron microscopy, and X-ray diffraction analysis were used to demonstrate that introduction of atomic hydrogen in the course of epitaxy markedly improves the overall structural quality of GaP films. Up to thicknesses of about 0.1 μm, the full width at half-maximum of the (004) reflection in the X-ray diffraction pattern of these films almost coincides with the theoretical value for defect-free films, which indicates that their state is nearly pseudomorphic.