Evolution of the photoresponse time of the GaAs/AlGaAs cyclotron resonance quantum Hall effect detector

摘要

The photoresponse time of the cyclotron resonance detector to terahertz radiation under integer quantum Hall effect conditions in the GaAs/AlGaAs heterostructure is shown to have a deep minimum at the Hall plateau center and two sharp maxima at the plateau edges. The minimum at the plateau center is associated with the fundamental property of vanishing of the random impurity potential screening under quantum Hall effect conditions. The decrease in the response time outside the plateau is related to the equilibrium population of the Landau level above (under) the Fermi level by electrons (holes), respectively, which increases the probability of photoexcited carrier recombination. It is shown that, under conditions of background radiation (300 K), relaxation times decrease by two orders of magnitude while retaining the characteristic magnetic field dependence.