Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO

摘要

Silicon nanowire samples fabricated by thermal evaporation of SiO powder were investigated by Cathodoluminescence. Three main bands were found at low temperatures, namely, peak 1 at about 620-650 nm (2.0-1.91 eV), peak 2 at 920 nm (1.35 eV), and peak 3 at 1280 nm (0.97 eV). An additional broad band (peak 4) in the infrared region with its maximum at similar to 1570 nm (0.79 eV) appears at room temperature. The origins of the emission bands are discussed.