Electrical Properties and Luminescence Spectra of Light-Emitting Diodes Based on InGaN/GaN Heterostructures with Modulation-Doped Quantum Wells

摘要

The distribution of charged centers N(w), quantum efficiency, and electroluminescence spectra of blue and green light-emitting diodes (LED) based on InGaN/AlGaN/GaN p-n heterostructures were investigated. Multiple InGaN/GaN quantum wells (QW) were modulation-doped with Si donors in GaN barriers. Acceptor and donor concentrations near the p-n junction were determined by the heterodyne method of dynamic capacitance to be about N_A ≥ 1 * 10~(19) cm~(-3) N_D ≥ 1 * 10~(18) cm~(-3). The N(w) functions exhibited maxima and minima with a period of 11-18 (±2-3 nm) nm. The energy diagram of the structures has been constructed. The shifts of spectral peaks with variation of current (J = 10~(-6)-3 * 10~(-2) A) are smaller (13-12 meV for blue and 20-50 meV for green LEDs) than the corresponding values for the diodes with undoped barriers (up to 150 meV). This effect is due to the screening of piezoelectric fields in QWs by electrons. The dependence of quantum efficiency on current correlates with the charge distribution and specific features in the current-voltage characteristics.