Mobility of Minority Charge Carriers in p-HgCdTe Films

摘要

Temperature dependences of electron mobility in p-Hg_(1-x)Cd_xTe films (x = 0.210–0.223) grown by molecular beam epitaxy are investigated. In the temperature range 125–300 K, mobility was found by the mobility-spectrum method, and for the range 77–125 K, it was found using a magnetophotoconductivity method suggested in this study. The method is based on the measurement of the magnetic-field dependence of photoconductivity. The magnetic field is parallel to the radiation and normal to the sample surface. The electron mobility is determined using the simple expression μn [m2/(V s)] = 1/BH [T]. Here, BH is the induction of the magnetic field corresponding to a half-amplitude of the photoconductivity signal under zero magnetic field. In the temperature range 100–125 K, the results obtained by the magnetophotoconductivity and mobility-spectrum methods coincide. For the samples investigated, the electron mobility at 77 K is in the range 5–8 m~2/(V s).