Electrically Active Centers in Si:Er Light-Emitting Layers Grown by Sublimation Molecular-Beam Epitaxy

摘要

Electrically active centers in light-emitting Si:Er layers grown by sublimation molecular-beam epitaxy (SMBE) on single-crystal Si substrates have been investigated by admittance spectroscopy with temperature scanning and by DLTS. The total density of electrically active centers is defined by shallow donor centers with ionization energies of 0.016-0.045 eV. The effect of growth conditions and post-growth annealing on the composition and density of electrically active centers has been studied. Significant differences in composition of the electrically active centers with deep levels and in channels of energy transfer from the electron subsystem of a crystal to Er~(3+) ions between Si:Er layers grown by SMBE and ion implantation have been revealed.