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首页> 外文期刊>Semiconductor physics quantum electronics and optoelectronics >Bi_2Te_(3-x)Se)_x (x = 0.04) nanocrystal formation
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Bi_2Te_(3-x)Se)_x (x = 0.04) nanocrystal formation

机译:BI_2TE_(3-小)S俄)_小 (小 = 0.04) nano Crystal formation

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摘要

The results of experimental researches dealing with formation of nanometric-size doped (Ag) layers on the surface (0001) between Te~((1))-Te~((1)) telluride quintet layers in Bi_2Te_(3-x)Se)_x (x = 0.04) crystals under directed crystallization has been submitted. During the crystal growth as result of impurity diffusion along a surface (0001), accumulation, redistribution and nanocrystal formation between Te~((1))-Te~((1)) layers occur. By the method of atomic-force microscopy, the Bi_2Te_(3-x)Se_x crystal images with nanolayers were obtained. Being based on experimental data, the fractal dimension of nanocrystalline layers was estimated.
机译:在Bi_2Te_(3-x)Se中Te〜((1))-Te〜((1))碲化物五重体层之间的表面(0001)上形成纳米级掺杂(Ag)层的实验研究结果已经提出了在定向结晶下的_x (x = 0.04)晶体。在杂质沿表面(0001)扩散的结果中,晶体生长期间,在Te〜((1))-Te〜((1))层之间发生了积累,再分布和纳米晶体的形成。通过原子力显微镜方法,获得了具有纳米层的Bi_2Te_(3-x)Se_x 晶体图像。基于实验数据,估计了纳米晶体层的分形维数。

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