Crystal quality of the InGaAs epitaxial layer on three-inch diameter Fe-doped InP substrates

摘要

Crystal Quality of the InGaAs Epitaxial Layer on Three-inch Diameter Fe-doped InP Substrates byYasuhiro Iguchi, Hiroshi Yano, Takashi Iwasaki Research has been conducted into the crystalquality of the InGaAs epitaxial layer grown on three-inch diameter VCZ-grown and LEC-grownInP(Fe) substrates. Double crystal X-ray reflection topographies of the InGaAs layer, which weremeasured using newly developed equipment, revealed that the lattice orientation variation of theInGaAs layer on VCZ-grown InP substrates was less than that of the InGaAs layer on LECgrown InPsubstrates. The average full width at half maximum (FWHM) of X-ray rocking curves of the InGaAslayer on VCZ-grown InP substrates was narrower than that of the InGaAs layer on LEC-grown InPsubstrates. The average dark current of 11,000 InGaAs pin-PD chips fabricated on VCZ-grown InPsubstrates was lower than that on the LECgrown InP substrates. Furthermore, the standard deviation of dark currents on the VCZ-grown InP substrate was smaller than that on the LEC-grown InP substrate. In terms of the crystallographic and devicecharacteristics, the crystal quality of theInGaAs layer on a three-inch diameter VCZ-grown InP(Fe) substrate is superior to that of the InGaAs layer on a three-inch diameter LEC-grown InP(Fe) substrate.