INTEGRATION OF SURFACE-MICROMACHINED POLYSILICON MIRRORS AND A STANDARD CMOS PROCESS

摘要

This paper describes the integration of surface micromachining with polysilicon and a standard CMOS process with aluminium gates. A demultiplexer circuit for addressing one micromachined minor out of a line of eight mirrors is realized as an example. The mirrors are electrostatically deflectable with driving voltages of about 30 V. An adaptation of the applied p-well CMOS process with aluminium gates and the surface micromachining is necessary in order to enable both processes to be integrated, The technology used is described. [References: 9]