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Flexible three-dimensional microelectrode array for neural applications

机译:用于神经应用的柔性三维微电极阵列

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A neural electrode array design is proposed with 3 mm long sharpened pillars made from an aluminumbased substrate. The array is composed by 25 electrically insulated pillars in a 5 × 5 matrix, in which each aluminum pillar was precisely machined via dicing saw technique. The result is an aluminum structure with high-aspect-ratio pillars (19:1), each with a tip radius of 10 μm. A thin-film of platinum was deposited via sputtering technique to perform the ionic signal transduction. Each pillar was encapsulated with an epoxy resin insulating the entire pillar excluding the tip. This process resulted in mechanically robust electrodes each capable of withstanding loads up to 200 mN before bending. The array implantation tests were conducted on agar gel at speeds of 50 mm/min, 120 mm/min and 180 mm/min which resulted in average implantation forces of 119 mN, 145 mN and 150 mN, respectively. Insertion and withdrawal tests were also performed in porcine cadaver brain showing a necessary force of 66 mN for successful explantation. A three point flexural test demonstrated a displacement of 0.8 mm before array’s breakage. The electrode’s impedance was characterized showing a near resistive impedance of 385 Ω in the frequency range from 2 kHz to 125 kHz. The resultant array, as well as the fabrication technique, is an innovative alternative to silicon-based electrode solutions, avoiding some fabrication methods and limitations related to silicon and increasing the mechanical flexibility of the array.
机译:提出了一种神经电极阵列设计,其具有由铝基基材制成的3毫米长的尖锐柱子。该阵列由5×5矩阵中的25个电绝缘支柱组成,其中每个铝支柱都通过切锯技术进行了精确加工。结果是铝结构具有高纵横比的柱子(19:1),每个柱子的尖端半径均为10μm。通过溅射技术沉积铂薄膜以执行离子信号转导。每个支柱都用环氧树脂密封,绝缘了除尖端之外的整个支柱。此过程产生了机械坚固的电极,每个电极在弯曲前都能承受高达200 mN的载荷。在琼脂凝胶上以50mm / min,120mm / min和180mm / min的速度进行阵列植入测试,这导致平均植入力分别为119mN,145mN和150mN。猪尸体大脑也进行了插入和退出试验,显示成功植入需要66 mN的力。三点弯曲试验表明,阵列破裂前的位移为0.8 mm。电极的阻抗经过表征,在2 kHz至125 kHz的频率范围内显示出385Ω的近电阻阻抗。所得的阵列以及制造技术是基于硅的电极解决方案的创新替代方案,避免了一些与硅有关的制造方法和限制,并提高了阵列的机械灵活性。

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