Titanium tellurite thick films prepared by electrophoretic deposition and their dielectric properties

摘要

TiTe_3O_8 ceramics and films can be well sintered below 800 deg C and consequently have the potential to be used for low-temperature co-fired ceramics. TiTe_3O_8thick films were fabricated by electrophoretic deposition on platinized Si substrates using TiTe_3O_8 powders synthesized by a conventional solid-state reaction. The permittivity of TiTe_3O_8 films is approx 54, with loss tan deta of approx 0.009, measured at 100 kHz. The temperature coefficients of permittivity of TiTe_3O_8 films and ceramics between 35 and 200 deg C are +78 and — 100 ppm deg C~(-1), respectively.