Undoped and Ga-doped hexagonal platelet interconnected ZnS nanowires: Cathodoluminescence and metal-semiconductor electron transport transition

摘要

Undoped and Ga-doped ZnS nanowires comprising hexagonal platelets with high carrier concentrations are derived using different substrates in the evaporation and condensation process. Cathodoluminescence results show that the dominant emission switches from near-band-edge emissions for the undoped ZnS nanowires to defect emissions for Ga-doped ZnS nanowires. The current-voltage results of the Ga-doped ZnS nanowires indicate low resistivity and unusual metal-like electron conduction following electron-phonon interactions at above 50 K, in contrast to the semiconductor behavior of the undoped ZnS nanowires.