Application of AFM technique for creation of patterns in nanoscale

摘要

The lithography is amain technology process which determines the properties of semiconductor devices. The resolution of optical lithography is insufficient for creation of submicrometer patterns, like, e.g., gate electrode in HEMT transistors. Thus, a novel technique that uses AFM technique and common photolithography was proposed. In the paper, the results of nanoscratching lithography were presented and discussed. Also the transmission and root mean square of thin metal films measurements were summarized.