Effect of PbTiO_3 seed layer on the orientation behavior and electrical properties of Bi(Mg_(1/2)Ti_(1/2))O_3-PbTiO_3 ferroelectric thin films

摘要

High Curie-temperature 0.63Bi(Mg_(1/2)Ti_(1/2))O_3-PbTiO_3 (BMT-PT) films were fabricated on Pt(111)/Ti/SiO_2/Si substrates by the sol-gel spin-coating method. The oriented growth behavior of thin films was controlled by introducing a PT seed layer onto the platinum electrode surface. The effect of the annealing method of the PT seed layer on the orientation behavior and electrical properties of BMT-PT films was investigated. It was found that BMT-PT thin film exhibits higher (100) orientation degree when the PT seed layer was treated by rapid thermal annealing. The dielectric permittivity increases while the remanent polarization and coercive field decrease with increasing the (100) orientation degree. These results were explained according to the relationship between the preferential orientation and the spontaneous polarization directions of the films.