Enhanced ferroelectric properties of 0.95Pb(Sc_(0.5)Ta_(0.5))O_3-0.05PbTiO_3 thin films with Pb(Zr_(0.52),Ti_(0.48))O_3 seed layer

摘要

0.95Pb(Sc_(0.5)Ta_(0.5))O_3-0.05%PbTiO_3 (PSTT5) thin films with and without a Pb(Zr_(0.52),Ti_(0.48))O_3 (PZT52/48) seed layer were deposited on Pt/Ti/ SiO_2/Si(1 0 0) substrates by RF magnetron sputtering. X-ray diffraction patterns indicate that the PSTT5 film with a PZT52/48 seed layer exhibited nearly pure perovskite crystalline phase with highly (4 0 0)-preferred orientation. Piezoresponse force microscopy observations reveal that a large out-of-plane spontaneous polarization exists in the highly (4 0 0)-oriented PSTT5 thin film. The PSTT5/PZT(52/48) possesses good ferroelectric properties with large remnant polarization P_r (12 μC/cm~2) and low coercive field E_c (110kV/cm). Moreover, The perfect butterfly-shaped capacitance-voltage characteristic curve and the relative dielectric constant as high as 733 is obtained in this PSTT5 thin film at 100 kHz.