首页>
外国专利>
Method of forming seed layers for the fabrication of ferroelectric thin films by MOCVD on high dielectric constant gate oxides
Method of forming seed layers for the fabrication of ferroelectric thin films by MOCVD on high dielectric constant gate oxides
展开▼
机译:在高介电常数栅极氧化物上通过MOCVD形成用于制造铁电薄膜的种子层的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of forming a ferroelectric thin film on a high-k layer includes preparing a silicon substrate; forming a high-k layer on the substrate; depositing a seed layer of ferroelectric material at a relatively high temperature on the high-k layer; depositing a top layer of ferroelectric material on the seed layer at a relatively low temperature; and annealing the substrate, the high-k layer and the ferroelectric layers to form a ferroelectric thin film. IMAGE
展开▼