Radiation-Induced Defects in K_2SO_4 : Cu Crystals

摘要

The formation of defects and the nature of fluorescence centers in irradiated K_2SO_4 : Cu crystals are studied by spectroscopic methods. It is shown that peaks of thermostimulated fluorescence (TSF) associated with copper impurity appear at 310-330 K in irradiated K_2SO_4 : Cu crystals. It is suggested that defect formation in irradiated K_2SO_4 : Cu crystals is related to the decay of electronic excitations near copper impurities. Hole centers SO_4~-, SO_3~-, and SO_2~- and complementary to them electronic O_3~- centers are structural units of radiation-induced defects. Energy of recombination processes is transferred to impurity centers, therefore, intracenter fluorescence of copper impurity is observed in all TSF peaks.