Structural and optoelectronic properties of antimony tin sulphide thin films deposited by thermal evaporation techniques

摘要

Thin films of SnSb_2S_4 have been prepared on glass substrate by using thermal evaporation techniques. The films were annealed in argon gas at low pressure in sealed glass ampoules at 85 C, 150 C, 275 C and 325 C. XRD of the films reveal that the low temperature annealed films are poly crystalline while the as deposited films and high annealed films are in amorphous states. There is no adequate variation in the photoconductivity response of the amorphous and crystalline phases. The transmittance of the films is low and having no transmittance below 740 nm. The band gap calculated by ellipsometry technique is in the range of 1.82-3.1 eV. The films have n-type conductivity but the film annealed at 325 C show p-type conductivity.