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首页> 外文期刊>Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic >Surface modification and etch process optimization of fused silica during reaction CHF3-Ar plasma etching
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Surface modification and etch process optimization of fused silica during reaction CHF3-Ar plasma etching

机译:反应CHF3-Ar等离子体刻蚀过程中熔融石英的表面改性和刻蚀工艺优化

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摘要

The ability to predict and control the influence of reaction ion etching process parameters on laser damage resistance of fused silica optical components is vital for their development in specialized applications such as inertial confinement fusion. In this study, a set of experiments was designed and performed to determine an optimized process condition by characterizing the evolution of the surface roughness and absorption of the fused silica samples treated at various gas flow rates. The macroscopic morphology, carbon concentration and laser damage resistance of the etched surface was measured. The optimized surface was obtained when the gas flow rate R (CHF3/(CHF3 +Ar)) decreased down to 38.4%. With the optimized etch process, the presence of subsurface defects known to lead to laser damage initiation was removed and prevented. The C atomic concentration of the sample surface etched was decreased by 64.7%. The laser damage resistance increased dramatically; the average threshold fluence for damage initiation increased from 6.79 J/cm(2) to 8.99 J/cm(2). (C) 2015 Elsevier GmbH. All rights reserved.
机译:预测和控制反应离子蚀刻工艺参数对熔融石英光学元件抗激光损伤的能力,对于其在特殊应用(例如惯性约束熔融)中的发展至关重要。在这项研究中,设计并执行了一组实验,以通过表征在各种气体流速下处理过的熔融二氧化硅样品的表面粗糙度和吸收特性来确定最佳工艺条件。测量蚀刻表面的宏观形态,碳浓度和抗激光损伤性。当气体流量R(CHF3 /(CHF3 + Ar))降至38.4%时,可获得最佳表面。通过优化的蚀刻工艺,可以消除并防止已知会导致激光损伤的次表面缺陷的出现。蚀刻的样品表面的C原子浓度降低了64.7%。耐激光损伤性显着提高;损害起始的平均阈值通量从6.79 J / cm(2)增加到8.99 J / cm(2)。 (C)2015 Elsevier GmbH。版权所有。

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