...
首页> 外文期刊>Optics & Laser Technology >Investigation of the chip to photodetector coupler with subwavelength grating on SOI
【24h】

Investigation of the chip to photodetector coupler with subwavelength grating on SOI

机译:亚波长光栅SOI芯片与光电探测器耦合器的研究

获取原文
获取原文并翻译 | 示例

摘要

We report on two kinds of investigation of the chip to photodetector coupler (CTPC) with uniform and blazed subwavelength grating (SWG) on silicon-on-insulator (SOI) that were conducted for silicon-based hybrid photodetector integration in an arrayed waveguide grating demodulation integrated microsystem. The theoretical model is presented, 3D FDTD and BPM simulations are used to optimize the coupler design. InP/InGaAs photodetector and SOI wafer were integrated through benzocyclobutene bonding. An efficient high-power absorption for TE mode in a broad band is achieved. The power absorption efficiencies of uniform and blazed SWGs in silicon-based hybrid photodetector integration at 1550 nm reach 73% and 75%, respectively in the simulation and it reaches as high as 25% in the measurement when coupling the TE-polarized 1550 nm light. (C) 2015 Elsevier Ltd. All rights reserved.
机译:我们报告了对绝缘体上硅(SOI)上均匀且炽热的亚波长光栅(SWG)的芯片到光电探测器耦合器(CTPC)的两种研究,这些研究是针对阵列波导光栅解调中基于硅的混合光电探测器集成而进行的集成微系统。提出了理论模型,并使用3D FDTD和BPM仿真来优化耦合器设计。通过苯并环丁烯键合将InP / InGaAs光电探测器和SOI晶片集成在一起。实现了宽带中TE模式的高效大功率吸收。在硅基混合光电探测器集成中,均匀和炽烈的SWG在1550 nm处的功率吸收效率在仿真中分别达到73%和75%,并且在耦合TE偏振1550 nm光时在测量中高达25%。 。 (C)2015 Elsevier Ltd.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号