Gain and threshold properties of InGaAsN/GaAsN material system for 1.3-mu m semiconductor lasers

摘要

The gain properties and valence subbands of InGaAsN/GaAsN quantum-well structures are numerically investigated with a self-consistent LASTIP simulation program. The simulation results show that the InGaAsN/GaAsN has lower transparency carrier density than the conventional InGaAsP/InP material system for 1.3-mu m semiconductor lasers. The material gain and radiative current density of InGaAsN/GaAsN with different compressive strains in quantum well and tensile strains in barrier are also studied. The material gain and radiative current density as functions of strain in quantum well and barrier are determined. The simulation results suggest that the laser performance and Auger recombination rate of the 1.3-mu m InGaAsN semiconductor laser may be markedly improved when the traditional GaAs barriers are replaced with the AlGaAs graded barriers. (c) 2006 Elsevier Ltd. All rights reserved.