Nd:GdVO_(4) as a three-level laser at 879 nm

摘要

We present what we believe to be the first true three-level laser based on a Nd-doped crystal. From the ~(4)F_(3/2)-~(4)I_(9/2) laser transition, the lower laser level being the ground state, emission at 879 nm in NdGdVO_(4) has been obtained with diode pumping. Up to 0.8 W of power has been achieved in cw operation and 24 (mu)J per pulse (35 ns) in the Q-switched regime. Intracavity second-harmonic generation in the pulsed regime is also demonstrated with 178 mW of average output power at 439.5 nm, corresponding to an energy of 17 (mu)J per pulse.