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首页> 外文期刊>Optoelectronics, Instrumentation and Data Processing >Simulating the Cross Section of Inelastic Scattering of Electrons in Layered Structures on the Basis of Dielectric Functions and Experimental Spectra of the Film and Substrate
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Simulating the Cross Section of Inelastic Scattering of Electrons in Layered Structures on the Basis of Dielectric Functions and Experimental Spectra of the Film and Substrate

机译:基于薄膜和基底的介电函数和实验光谱模拟层状结构中电子的非弹性散射截面

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摘要

This paper describes a technique of simulating the cross section of inelastic scattering of electrons in layered structures from the experimental spectra of the cross section of inelastic scattering of reflected electrons of structural components on the basis of the theoretical Yubero - Tougaard model of the cross section of inelastic scattering in a homogeneous medium and its generalization for the case of layered structures. This technique is tested by an example of studying the spectra of the cross section of inelastic scattering in a two-layer SiO_2/Si structure.
机译:本文在理论的Yubero-Tougaard模型的基础上,从结构成分的反射电子的非弹性散射截面的实验光谱中描述了一种模拟分层结构中电子的非弹性散射截面的技术。均匀介质中的非弹性散射及其对于层状结构的推广。通过研究两层SiO_2 / Si结构中非弹性散射截面的光谱的示例来测试该技术。

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