Model approach to low-energy inelastic silicon-hydrogen collision processes

摘要

Cross sections and rate coefficients for inelastic processes in Si + H and Si+ + H- collisions are calculated for all transitions between 27 low-lying states up to and including the ionic state. The electronic molecular structure is determined within a recently proposed model approach based on the asymptotic method. Nonadiabatic nuclear dynamics is treated by means of the multichannel formula for nonadiabatic transition probabilities based on the Landau-Zener model. It is shown that the highest rate values correspond to excitation and de-excitation processes between states in the optimal window, as well as for ion pair formation and neutralization processes between these states and the ionic one.