Investigation of the GaAs Surface after Etching in the Plasma of Mixtures HCI/Ar, HCl/Cl_2, and HCI/H_2 by Atomic-Force Microscopy

摘要

Chlorine-containing plasma and its mixtures with molecular and inert gases is often used to form the topology on the semiconductor surface. A comparative investigation of the surface quality of the semiconductor structure after plasma chemical etching in the plasma of mixtures HCl/Ar, HCl/C1_2, and HC1/H_2 is performed. High etching rates in chlorine lead to numerous undesirable effects, while the plasma of hydrogen chloride and its mixtures makes it possible to perform etching with better process uniformity and purity. However, monitoring of the surface quality of the samples remains a topical problem of modern electronics. The surface of the samples was monitored using a Solver-P47Pro atomic-force microscope.