Direct determination of track etch rate and response of CR-39 to normal incidence high-energy heavy ions

摘要

Response of CR-39 to high-energy heavy ions was investigated by using optical microphotographs of track profiles for Ar (480 MeV) and Ni (300 MeV). The depth dependence of track etch rate (V-r) was determined experimentally by track length measurement. The results indicate that V-r for the low REL Ar tracks is depth independent but for the high REL Ni tracks V-r is gradually decreasing with depth. The region beyond 30 mum depth inside the detector shows a stable region regarding the detector response for both ions. (C) 2001 Published by Elsevier Science Ltd. [References: 7]