Study of the correlation between low-frequency noise and the current-voltage characteristic of a GaAs Schottky-barrier diode

摘要

Correlation between low-frequency (1/f) noise and the current-voltage (I - V) characteristic of a beam-lead GaAs Schottky-barrier diode (SBD) is studied. It is shown that the ideality factor n of the I - V characteristic (and its increase) in the current range 10{sup}(-4)-10{sup}(-3) A has the maximum correlation (the correlation coefficient k{sub}(cor) > 0.9) with low- frequency noise measured at the same currents at frequencies 8-10 KHz, i.e., n is most sensitive to the series resistance of an SBD. At the same time, the values of n in the 10{sup}(-6)-10{sup}(-5) A range usually do not exceed 1.1 and do not show correlation with low-frequency noise. The correlation is explained predominantly by the barrier-height nonuniformity over the Schottky-barrier contact.