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首页> 外文期刊>Langmuir: The ACS Journal of Surfaces and Colloids >Linker-enhanced binding of metalloporphyrins to cadmium selenide and implications for oxygen detection
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Linker-enhanced binding of metalloporphyrins to cadmium selenide and implications for oxygen detection

机译:金属卟啉与硒化镉的连接子增强结合及其对氧检测的影响

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Adsorption of trivalent metalloporphyrins from nitrogen-saturated chloroform solution onto etched n-CdSe crystals causes a profound reversible quenching of the semiconductor's photoluminescence (PL). The PL responses due to the presence of (MDMPPCl)-D-III and MmTPPCl (DMPPCl = protoporphyrin IX dimethyl eater chloride; TPP = tetraphenylporphyrin; M = Fe, Mn) exhibit a concentration dependence that can be fit to the Langmuir adsorption isotherm model to yield binding constants of 10(4)-10(5) M-1. The CdSe surface may be modified by adsorption from solution of specifically designed linker ligands (1-4). These ligands are able to bind to the semiconductor surface through one end and to ligate a heme analogue axially on the other end. Surfaces derivatized by each of the linkers showed concentration-dependent metalloporphyrin-induced PL changes, corresponding to roughly order-of-magnitude increases in binding constants to 10(5) to 10(6) M-1. Films of linker-metalloporphyrin complexes were coated onto the semiconductor substrates and characterized by X-ray photoelectron (XPS) spectroscopy. The linker-metalloporphyrin films can be used as transducers for dioxygen detection. Relative to a nitrogen ambient, the PL of CdSe samples coated with 1-3 is reversibly quenched by exposure to oxygen (binding constants of similar to 1-10 atm(-1); detection limit of similar to 0.1 atm), while bare CdSe surfaces show no response to dioxygen. These coated CdSe samples were further characterized by contact potential difference (CPD) and time-resolved photoluminescence (TRPL), which suggest that oxygen-induced PL changes are due to variations in the electric field present in the semiconductor substrate. [References: 28]
机译:三价金属卟啉从氮饱和氯仿溶液中吸附到蚀刻的n-CdSe晶体上会导致半导体的光致发光(PL)发生可逆的猝灭。由于存在(MDMPPC1)-D-III和MmTPPC1(DMPPCl =原卟啉IX二甲基氯化物; TPP =四苯基卟啉; M = Fe,Mn)而引起的PL响应具有浓度依赖性,可以适合Langmuir吸附等温线模型产生10(4)-10(5)M-1的结合常数。可以通过从专门设计的接头配体(1-4)溶液中吸附来修饰CdSe表面。这些配体能够通过一端结合至半导体表面,并在另一端轴向连接血红素类似物。由每个接头衍生的表面显示出浓度依赖性的金属卟啉诱导的PL变化,对应于10(5)至10(6)M-1的结合常数的大致数量级的增加。将连接基-金属卟啉络合物的膜涂覆在半导体衬底上,并通过X射线光电子(XPS)光谱进行表征。接头金属卟啉膜可用作双氧检测的换能器。相对于氮气环境,涂有1-3的CdSe样品的PL通过暴露于氧气可逆淬灭(结合常数类似于1-10 atm(-1);检测极限类似于0.1 atm),而裸露的CdSe表面对双氧无反应。这些涂覆的CdSe样品的特征还在于接触电势差(CPD)和时间分辨光致发光(TRPL),这表明氧诱导的PL变化是由于半导体衬底中存在的电场变化引起的。 [参考:28]

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