首页> 外文期刊>Langmuir: The ACS Journal of Surfaces and Colloids >Control over film thickness of SnO2 ultrathin film selectively deposited on a patterned self-assembled monolayer
【24h】

Control over film thickness of SnO2 ultrathin film selectively deposited on a patterned self-assembled monolayer

机译:控制选择性沉积在有图案的自组装单层膜上的SnO2超薄膜的膜厚

获取原文
获取原文并翻译 | 示例
       

摘要

This paper presents a novel process for the fabrication of site-selectively deposited tin oxide ultrathin films (<10 nm) by using molecular recognition between the precursors and the surface of the Si substrate. Using this simple technique, the film thickness of micropatterned tin oxide films was easily controlled. Patterned self-assembled monolayers, in which both hydrophilic and hydrophobic areas formed, were used as templates for the site-selective deposition of the films. Two precursors of SnCl4 and C4H9SnCl3 were selected. The films were selectively deposited on the hydrophilic regions through the liquid phase. The growth rate of the film deposited in SnCl4 solution was approximately 6 times faster than that in C4H9SnCl3 solution. A quartz crystal microbalance measurement implied that film growth could be suppressed by the formation of hydrophobic surfaces on the growing films with increasing immersion time in C4H9SnCl3 solution. [References: 46]
机译:本文介绍了一种通过利用前驱物和Si衬底表面之间的分子识别技术来制造定点沉积氧化锡超薄膜(<10 nm)的新方法。使用这种简单的技术,可以容易地控制微图案化的氧化锡膜的膜厚。在其中形成亲水和疏水区域的带图案的自组装单分子层用作模板,用于薄膜的定点沉积。选择了SnCl4和C4H9SnCl3的两种前体。通过液相将膜选择性地沉积在亲水区域上。 SnCl4溶液中沉积的薄膜的生长速率比C4H9SnCl3溶液中的薄膜的生长速率快约6倍。石英微天平测量结果表明,随着在C4H9SnCl3溶液中浸泡时间的增加,在生长膜上形成疏水表面可以抑制膜的生长。 [参考:46]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号