Three Dimensional Modeling of Ge_(0.98)Si_(0.02) Crystal Growth Conducted on board FOTON-M2 in the Presence of Rotating Magnetic Field

摘要

A three-dimensional numerical modeling of Ge_(0.98)Si_(0.02) crystal growth is conducted to investigate the effect of g-jitter along with rotating magnetic field on the heat and mass transfer in the solvent region. It was found that the speed in the flow under the low frequency g-jitter is in the nano-centimeter per second and is too weak to have any impact on the silicon concentration in the process of crystallization near the growth interface. Different magnetic field intensities for different rotational speeds were examined. It was also found that rotating magnetic field not only did not suppress the convection but also generated an undesirable convective motion in the solvent region which is unsuitable for achieving the uniform and homogeneous crystal growth near the growth interface.