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机译:
Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan;
机译:Accurate Quantum Transport Modeling of High-Speed In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunneling Diodes
机译:Timehyphen;resolved measurements of tunneling between double quantum wells in In0.53Ga0.47As/InP
机译:Influence of carrier capture on the quantum efficiency of ashyphen;etched and epitaxially buried In0.53Ga0.47As/InP quantum wires
机译:InP / InxGa1-xAs / In0.53Ga0.47As HEMT的生长及其特性
机译:利用扫描穿隧显微镜探讨在硒化铟上未氧化表面和氧化表面之介面接合处的电子特性 =Scanning Tunneling Microscope study of InSe Surface Electronic Properties at the Fresh/Oxided Interface Junction
机译:电学和光学特性对AlAs / In0.53Ga0.47As / InAs共振隧穿二极管中生长中断的依赖性
机译:In0.53Ga0.47As金属氧化物半导体系统中的反型:In0.53Ga0.47As掺杂浓度的影响
机译:In0.53Ga0.47as / Inp对称增益光电混频器的设计与分析