The modified method of characteristics with mixed finite element domain decomposition procedures for the transient behavior of a semiconductor device

摘要

For the transient behavior of a semiconductor device, the modified method of characteristics with mixed finite element domain decomposition procedures applicable to parallel arithmetic is put forward. The electric potential equation is described by the mixed finite element method, and the electric, hole concentration and heat conduction equations are treated by the modified method of characteristics finite element domain decomposition methods. Some techniques, such as calculus of variations, domain decomposition, characteristic method, energy method, negative norm estimate and prior estimates and techniques are employed. Optimal order estimates in L~2 norm are derived for the error in the approximation solution. Thus the well-known theoretical problem has been thoroughly and completely solved.