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首页> 外文期刊>Neurosurgery >Risk factors for hemorrhage during microelectrode-guided deep brain stimulation and the introduction of an improved microelectrode design.
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Risk factors for hemorrhage during microelectrode-guided deep brain stimulation and the introduction of an improved microelectrode design.

机译:微电极引导的深部大脑刺激过程中出血的危险因素,以及改进的微电极设计的引入。

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OBJECTIVE: Hemorrhage is an infrequent but potentially devastating complication of deep brain stimulation (DBS) surgery. We examined the factors associated with hemorrhage after DBS surgery and evaluated a modified microelectrode design that may improve the safety of this procedure. METHODS: All microelectrode-guided DBS procedures performed at our institution between January 2000 and March 2008 were included in this study. A new microelectrode design with decreased diameter was introduced in May 2004, and data from the 2 types of electrodes were compared. RESULTS: We examined 246 microelectrode-guided lead implantations in 130 patients. Postoperative imaging revealed 7 hemorrhages (2.8%). Five of the 7 (2.0%) resulted in focal neurological deficits, all of which resolved within 1 month with the exception of 1 patient lost to follow-up. The new microelectrode design significantly decreased the number of hemorrhages (P = 0.04). A surgical trajectory traversing the ventricle also contributed significantly to the overall hemorrhage rate (P = 0.02) and specifically to the intraventricular hemorrhage rate (P = 0.01). In addition, the new microelectrode design significantly decreased the rate of intraventricular hemorrhage, given a ventricular penetration (P = 0.01). The mean age of patients with hemorrhage was significantly higher than that of patients without hemorrhage (P = 0.02). Hypertension, sex, and number of microelectrodes passed did not significantly contribute to hemorrhage rates in our population. CONCLUSION: The rate of complications after DBS surgery is not uniformly distributed across all cases. In particular, the rates of hemorrhage were increased in older patients. Importantly, transventricular electrode trajectories appeared to increase the risk of hemorrhage. A new microelectrode design minimizing the volume of brain parenchyma penetrated during microelectrode recording leads to decreased rates of hemorrhage, particularly if the ventricles are breached.
机译:目的:出血是深部脑刺激(DBS)手术的一种罕见但可能具有破坏性的并发症。我们检查了DBS手术后与出血相关的因素,并评估了改进的微电极设计,该设计可以提高该手术的安全性。方法:本研究包括2000年1月至2008年3月在我们机构进行的所有微电极引导的DBS程序。 2004年5月推出了一种新的直径减小的微电极设计,并比较了两种电极的数据。结果:我们检查了130例患者中的246例微电极引导的铅植入。术后影像学检查发现7处出血(2.8%)。 7例中有5例(2.0%)导致局灶性神经功能缺损,除1例患者丢失随访外,所有这些均在1个月内解决。新的微电极设计显着减少了出血数量(P = 0.04)。穿越脑室的手术轨迹也对总体出血率(P = 0.02),特别是对脑室内出血率(P = 0.01)有重要贡献。此外,新的微电极设计显着降低了脑室出血的发生率(P = 0.01)。出血患者的平均年龄显着高于无出血患者(P = 0.02)。高血压,性别和通过的微电极数量并未显着影响我们人群的出血率。结论:DBS手术后的并发症发生率并非在所有病例中均一。特别是,老年患者的出血率增加。重要的是,心室电极轨迹似乎增加了出血的风险。一种新的微电极设计可最大程度地减少在微电极记录过程中穿透的脑实质的体积,从而降低出血率,尤其是在心室被破坏的情况下。

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